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MBR140SF 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 MBR140SF
상세설명  Surface Mount Schottky Power Rectifier
PDF  6 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBR140SF 데이터시트(HTML) 2 Page - ON Semiconductor

  MBR140SF Datasheet HTML 1Page - ON Semiconductor MBR140SF Datasheet HTML 2Page - ON Semiconductor MBR140SF Datasheet HTML 3Page - ON Semiconductor MBR140SF Datasheet HTML 4Page - ON Semiconductor MBR140SF Datasheet HTML 5Page - ON Semiconductor MBR140SF Datasheet HTML 6Page - ON Semiconductor  
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MBR140SF, NRVB140SF, SNRVB140SF
www.onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
Average Rectified Forward Current (At Rated VR, TL = 112°C)
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TL = 95°C)
IFRM
2.0
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
30
A
Storage Temperature
Tstg
−55 to 150
°C
Operating Junction Temperature
TJ
−55 to 125
°C
Voltage Rate of Change (Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
VF
TJ = 25°C
TJ = 85°C
V
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
0.36
0.55
0.85
0.30
0.515
0.88
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
IR
TJ = 25°C
TJ = 85°C
mA
(VR = 40 V)
(VR = 20 V)
0.5
0.15
25
18
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.



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