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BSC009NE2LS5I 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 BSC009NE2LS5I
상세설명  isc N-Channel MOSFET Transistor
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BSC009NE2LS5I 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc N-Channel MOSFET Transistor
BSC009NE2LS5I
www.iscsemi.com
2023-8-18
22
Electrical Characteristics (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0; ID= 1mA
25
--
--
V
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 250uA
1.2
--
2.0
V
RDS(ON)1
Drain-Source On-stage Resistance
VGS=10V; ID=30A
--
--
0.95
m
RDS(ON)2
Drain-Source On-stage Resistance
VGS=4.5V; ID=30A
--
--
1.35
m
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
--
--
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=20V; VGS=0
--
--
0.5
mA
Ciss
Input Capacitance
VGS = 0V,
VDS = 12V,
f = 1.0MHz
--
2450
--
pF
Coss
Output Capacitance
--
1400
--
Crss
Reverse Transfer Capacitance
--
135
--
Qg
Total Gate Charge
VDD = 12V,
ID = 30A,
VGS = 10V
--
40
--
nC
Qgs
Gate-Source Charge
--
4.5
--
Qgd
Gate-Drain Charge
--
4.8
--
td(on)
Turn-on Delay Time
VDD = 12V,
ID = 30A,
RG =1.6Ω
--
6
--
ns
tr
Turn-on Rise Time
--
6
--
td(off)
Turn-off Delay Time
--
30
--
tf
Turn-off Fall Time
--
5
--
Drain - Source Body Diode Characteristics
VSD
Diode Forward Voltage
VGS=0V,IS=11A
--
--
0.62
V
Qrr
Reverse Recovery Charge
VR=15V,IF=12A,
dIF/dt=400A/ms
--
75
--
ns



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