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2N6718-B-AB3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2N6718-B-AB3-R
상세설명  NPN GENERAL PLANAR TRANSISTOR
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N6718-B-AB3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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2N6718
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R201-056,B
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current (Continue)
IC
1
A
Collector Current (Pulse)
IC
2
A
SOT-89
0.5
W
TO-126C
1.6
W
Total Power Dissipation
TO-92
PD
850
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO IC=100uA
100
V
Collector-Emitter Breakdown Voltage (note)
BVCEO IC=1mA
100
V
Emitter-Base Breakdown Voltage
BVEBO IE=10µA
5
V
Collector-Emitter Saturation Voltage
VCE(SAT) IC=350mA, IB=35mA
350
mV
Collector Cut-Off Current
ICBO
VCB=80V
100
nA
hFE1
VCE=1V, IC=50mA
80
hFE2
VCE=1V, IC=250mA
50
300
DC Current Gain
hFE3
VCE=1V, IC=500mA
20
Current Gain - Bandwidth Product
fT
VCE=10V, IC=50mA,
f=100MHz
50
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
20
pF
Note: Pulse test: PulseWidth≤380
µs, Duty Cycle≤2%
CLASSIFICATION OF hFE2
RANK
A
B
RANGE
50~115
95~300



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