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2N5551L-B-AB3-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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2N5551L-B-AB3-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() 2N5551 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R201-002.B TYPICAL CHARACTERISTICS DC Current Gain Collector Current, IC (mA) VCE=5V Collector Output Capacitance Collector-Base Voltage (V) 0 2 4 6 8 10 f=1MHz IE=0 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 Base-Emitter on Voltage Base-Emitter Voltage (V) 0 0.2 0.4 0.6 0.8 1.0 VCE=5V Collector Current, IC (mA) Saturation Voltage IC=10*IB 10 3 10 2 10 1 10 0 10 -2 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 10 3 VCE(SAT) VBE(SAT) Current Gain-Bandwidth Product Collector Current, IC (mA) VCE=10V 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 |
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