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SST38VF6402B 데이터시트(PDF) 26 Page - Microchip Technology |
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SST38VF6402B 데이터시트(HTML) 26 Page - Microchip Technology |
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26 / 56 page ![]() SST38VF6401B / SST38VF6402B / SST38VF6403B / SST38VF6404B DS20005002D-page 26 Preliminary 2013 Microchip Technology Inc. 6.0 AC CHARACTERISTICS TABLE 6-1: READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V Symbol Parameter Min Max Units TRC Read Cycle Time 70 ns TCE Chip Enable Access Time 70 ns TAA Address Access Time 70 ns TPACC Page Access Time 25 ns TOE Output Enable Access Time 25 ns TCLZ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 ns TOLZ1 OE# Low to Active Output 0 ns TCHZ1 CE# High to High-Z Output 20 ns TOHZ1 OE# High to High-Z Output 20 ns TOH1 Output Hold from Address Change 0 ns TRP1 RST# Pulse Width 500 ns TRHR1 RST# High before Read 50 ns TRYE1,2 2. This parameter applies to Block-Erase and Program operations. This parameter does not apply to Chip-Erase operations. RST# Pin Low to Read Mode 20 μs TRY1 RST# Pin Low to Read Mode – not during Program or Erase algorithms. 500 ns TRPD1 RST# Input Low to Standby mode 20 μs TRB1 RY / BY# Output high to CE# / OE# pin Low 0 ns TPWD Delay for each password check 1 μs |
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