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2SC3320 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2SC3320
상세설명  HIGH VOLTAGE HIGH SPEED SWITCHING
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC3320 데이터시트(HTML) 2 Page - Unisonic Technologies

  2SC3320 Datasheet HTML 1Page - Unisonic Technologies 2SC3320 Datasheet HTML 2Page - Unisonic Technologies 2SC3320 Datasheet HTML 3Page - Unisonic Technologies 2SC3320 Datasheet HTML 4Page - Unisonic Technologies 2SC3320 Datasheet HTML 5Page - Unisonic Technologies  
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2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R214-008,B
ABSOLUTE MAXIMUM RATINGS (TC = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
VCBO
500
V
VCEO
400
V
Collector Emitter Voltage
VCEO(SUS)
400
V
Emitter Base Voltage
VEBO
7
V
Collector Current
IC
15
A
Base Current
IB
5
A
Power Dissipation
PD
80
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~+70℃ operating temperature range
and assured by design from -20℃~+85℃.
ELECTRICAL SPECIFICATIONS (TC =25℃, Unless Otherwise Specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Base Voltage
VCBO
ICBO=1mA
500
V
VCEO
ICEO=10mA
400
V
Collector Emitter Voltage
VCEO(SUS) IC=0.2A
400
V
Emitter Base Voltage
VEBO
IEBO=1mA
7
V
Collector Emitter Saturation Voltage
VCE (SAT)
1
V
Base Emitter Saturation Voltage
VBE (SAT)
IC=6A, IB=1.2A
1.5
V
Collector Cut-off Current
ICBO
VCBO=500V
1
mA
Emitter Cut-off Current
IEBO
VEBO=7V
1
mA
DC Current Gain
hFE
IC=6A, VCE=5V
10
tON
0.5
µs
tSTG
1.5
µs
Switching Time
tF
IC=7.5A, IB1 =1.5A, IB2=-3A
RL=20Ω, Pw=20µs, Duty ≤ 2%
0.15
µs
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance Junction to Case
θJC
1.55
℃
/W



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