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2SD1691 데이터시트(PDF) 3 Page - Unisonic Technologies |
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2SD1691 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 3 page ![]() UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R217-003,A Ic - VCE 0 0 COLLECTOR-EMITTER VOLTAGE VCE(V) 10 8 6 4 2 0.4 0.8 1.2 1.6 2.0 IB=60m A IB=40m A IB=30m A IB=20mA IB=0mA IB=80mA IB=10mA 1k 500 300 100 50 30 10 1 COLLECTOR CURRENT Ic(A) 5 3 VCE=2V VCE=1V hFE - Ic 0.01 0.03 0.3 1 3 10 0.1 10 5 3 1 0.5 0.3 0.1 0.01 0.01 0.03 0.3 COLLECTOR CURRENT Ic(A) 13 10 0.05 0.03 VBE(sat) Ic/IB=10 VBE(sat),VCE(sat) - Ic 0.1 VCE(sat) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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