전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

2SB649A-B-AB3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2SB649A-B-AB3-R
상세설명  BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SB649A-B-AB3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  2SB649A-B-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SB649A-B-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SB649A-B-AB3-R Datasheet HTML 3Page - Unisonic Technologies 2SB649A-B-AB3-R Datasheet HTML 4Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
2SB649/A
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R204-006,D
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-180
V
2SB649
-120
Collector-Emitter Voltage
2SB649A
VCEO
-160
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-1.5
A
Collector Peak Current
lC(PEAK)
-3
A
TO-126/TO-126C
1.4
W
TO-92
1
W
Collector Power Dissipation
SOT-89
PD
500
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector to Base Breakdown Voltage
BVCBO
IC=-1mA, IE=0
-180
V
2SB649
-120
Collector
to
Emitter
Breakdown
Voltage
2SB649A
BVCEO
IC=-10mA, RBE=∞
-160
V
Emitter to Base Breakdown Voltage
BVEBO
IE=-1mA, IC=0
-5
V
Collector Cut-off Current
ICBO
VCB=-160V, IE=0
-10
µA
hFE1
VCE=-5V, IC=-150mA (note)
60
320
2SB649
hFE2
VCE=-5V, IC=-500mA (note)
30
hFE1
VCE=-5V, IC=-150mA (note)
60
200
DC Current Gain
2SB649A
hFE2
VCE=-5V, IC=-500mA (note)
30
Collector-Emitter Saturation Voltage
VCE(SAT) Ic=-600mA, IB=-50mA
-1
V
Base-Emitter Voltage
VBE
VCE=-5V, IC=-150mA
-1.5
V
Current Gain Bandwidth Product
fT
VCE=-5V,IC=-150mA
140
MHz
Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
27
pF
Note: Pulse test.
CLASSIFICATION OF hFE
RANK
B
C
D
RANGE
60-120
100-200
160-320



Html Pages

1 2 3 4


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com