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DTA114T-AL3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 DTA114T-AL3-R
상세설명  DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTA114T-AL3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  DTA114T-AL3-R Datasheet HTML 1Page - Unisonic Technologies DTA114T-AL3-R Datasheet HTML 2Page - Unisonic Technologies DTA114T-AL3-R Datasheet HTML 3Page - Unisonic Technologies  
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DTA114T
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
www.unisonic.com.tw
QW-R206-061,B
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
SOT-23
200
mW
Collector Power Dissipation
SOT-323/SOT-523
PC
150
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO IC=-50μA
-50
V
Collector-Emitter Breakdown Voltage
BVCEO IC=-1mA
-50
V
Emitter-Base Breakdown Voltage
BVEBO IE=-50μA
-5
V
Collector-Emitter Saturation Voltage
VCE(SAT) IC=-10mA, IB=-1mA
-0.3
V
Collector Cutoff Current
ICBO
VCB=-50V
-0.5
μA
Emitter Cutoff Current
IEBO
VEB=-4V
-0.5
μA
DC Current Gain
hFE
VCE=-5V, IC=-1mA
100
250
600
Input Resistance
R1
7
10
13
kΩ
Transition Frequency
fT
VCE=-10V, IE=5mA, f=100MHz*
250
MHz
* Transition frequency of the device



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