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STB11NM60 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STB11NM60
상세설명  N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
PDF  16 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB11NM60 데이터시트(HTML) 5 Page - STMicroelectronics

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STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
Electrical characteristics
5/16
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=300 V, ID=5.5A,
RG=4.7Ω, VGS=10V
(see Figure 17)
20
20
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=480V, ID=11A,
RG=4.7Ω, VGS=10V
(see Figure 17)
6
11
19
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
11
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
44
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=11A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11A,
di/dt = 100A/µs,
VDD=100V, Tj=25°C
(see Figure 16)
390
3.8
19.5
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
(see Figure 16)
570
5.7
20
ns
µC
A



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