| 전자부품 데이터시트 검색엔진 |
|
2SD965A-S-T92-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
2SD965A-S-T92-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
|
3 / 4 page ![]() 2SD965/A NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R209-007,B TYPICAL CHARACTERISTICS Static Characteristics Collector-Emitter Voltage ( V) 0 0.4 0.8 1.2 1.6 2.0 0 1.0 1.5 2.0 2.5 3.0 DC Current Gain Collector Current, IC (mA) VCE=2V 10 0 10 1 10 2 10 3 10 -1 10 1 10 2 10 3 10 4 IB=3.0mA IB=2.5mA IB=2.0mA IB=1.0mA IB=1.5mA IB=0.5mA Base-Emitter on Voltage Collector Current, IC (mA) Saturation Voltage IC=30·IB Ta=75℃ -25℃ 25℃ VCE=2V 0 1 2 3 4 5 6 00.8 1.2 1.6 2.0 Base to Emitter Voltage, VBE (V) 0.4 10 1 10 2 10 3 10 4 10 0 10 1 10 2 10 3 10 4 VBE(SAT) VCE(SAT) Current Gain-Bandwidth Product Collector Output Capacitance Collector Current, IC (mA) VCE=6V Collector-Base Voltage (V) 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 f=1MHz IE=0 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |