BUT11AI datasheet(1/4 Pages) PHILIPS

부품명	BUT11AI

상세설명	Silicon Diffused Power Transistor

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제조업체	PHILIPS [NXP Semiconductors]

홈페이지	http://www.nxp.com

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11AI

GENERAL DESCRIPTION

Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high

frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control

systems etc.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0 V

-

1000

V

CEO

Collector-emitter voltage (open base)

-

450

V

I

C

Collector current (DC)

-

5

A

I

CM

Collector current peak value

-

10

A

P

tot

Total power dissipation

T

mb ≤ 25 ˚C

-

100

W

V

CEsat

Collector-emitter saturation voltage

I

C = 2.5 A; IB = 0.33 A

-

1.5

V

I

Csat

Collector Saturation current

2.5

A

t

f

Inductive fall time

I

Con = 2.5 A; IBon = 0.5 A

0.08

0.15

µs

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

1

base

2

collector

3

emitter

tab

collector

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0 V

-

1000

V

CEO

Collector-emitter voltage (open base)

-

450

V

I

C

Collector current (DC)

-

5

A

I

CM

Collector current peak value

-

10

A

I

B

Base current (DC)

-

2

A

I

BM

Base current peak value

-

4

A

P

tot

Total power dissipation

T

mb ≤

25 ˚C

-

100

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-mb

Junction to mounting base

-

1.25

K/W

R

th j-a

Junction to ambient

in free air

-

60

K/W

12 3

tab

b

c

e

August 1997

1

Rev 1.000

유사한 부품 번호 - BUT11AI

제조업체	부품명	데이터시트	상세설명
Inchange Semiconductor ...	BUT11AI	194Kb / 2P	isc Silicon NPN Power Transistor

More results

유사한 설명 - BUT11AI

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	BU1706A	76Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.000
	BU1706AB	83Kb / 7P	Silicon Diffused Power Transistor February 1998 Rev 1.000
	BU2506DF	66Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.400
	BU2507AX	55Kb / 6P	Silicon Diffused Power Transistor eptember 1997 Rev 1.100
Wing Shing Computer Com...	2SD1577	138Kb / 1P	Silicon Diffused Power Transistor
Wing Shing Computer Com...	S2005A	95Kb / 1P	SILICON DIFFUSED POWER TRANSISTOR
NXP Semiconductors	BU2508DF	71Kb / 7P	Silicon Diffused Power Transistor July 1998-Rev 1.600
	BUJ100B	65Kb / 8P	Silicon Diffused Power Transistor May 2001-Rev 1.000
	BUJ105AD	88Kb / 12P	Silicon diffused power transistor Rev. 01-14 December 2004
	BUJ403A127	125Kb / 9P	Silicon Diffused Power Transistor December 1998

More results

BUT11AI 데이터시트(PDF) 1 Page - NXP Semiconductors

BUT11AI 데이터시트(HTML) 1 Page - NXP Semiconductors

유사한 부품 번호 - BUT11AI

유사한 설명 - BUT11AI

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