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BC817L-16-AE3-R 데이터시트(PDF) 4 Page - Unisonic Technologies |
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BC817L-16-AE3-R 데이터시트(HTML) 4 Page - Unisonic Technologies |
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4 / 4 page ![]() BC817 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 www.unisonic.com.tw QW-R206-025.B TYPICAL CHARACTERISTICS(cont.) 1 10 100 1000 0 100 200 300 400 500 VCE = 10V Gain Bandwidth Product vs Collector Current SOT-23 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 Power Dissipation vs Ambient Temperature Collector Current, IC(mA) Temperature (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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