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BC856L-B-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 BC856L-B-AE3-R
상세설명  SWITCHING AND AMPLIFIER APPLICATIONS
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BC856L-B-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  BC856L-B-AE3-R Datasheet HTML 1Page - Unisonic Technologies BC856L-B-AE3-R Datasheet HTML 2Page - Unisonic Technologies BC856L-B-AE3-R Datasheet HTML 3Page - Unisonic Technologies BC856L-B-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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BC856/BC857/BC858
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-028,B
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
BC856
-80
V
BC857
-50
V
Collector-Base Voltage
BC858
VCBO
-30
V
BC856
-65
V
BC857
-45
V
Collector-Emitter Voltage
BC858
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Dissipation
PD
310
mW
Collector Current (DC)
IC
-100
mA
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector Cut-Off Current
ICBO
VCB=-30V, IE=0
-15
nA
DC Current Gain
hFE
VCE=-5V, IC=-2mA
110
800
IC=-10mA,IB=-0.5mA
-90
-300
mV
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-100mA,IB=-5mA
-250
-650
mV
IC=-10mA,IB=-0.5mA
-700
mV
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-100mA,IB=-5mA
-900
mV
VCE=-5V,IC=-2mA
-600
-660
-750
mV
Base-Emitter On Voltage
VBE(ON)
VCE=-5V,IC=-10mA
-800
mV
Current Gain Bandwidth Product
fT
VCE=-5V,IC=-10mA, f=100MHz
150
MHz
Output Capacitance
Cob
VCB=-10V,IE=0,f=1MHz
6
pF
Noise Figure
NF
VCE=-5V, IC=-200μA, f=1KHz, RG=2KΩ
2
10
dB
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
110-220
200-450
420-800



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