BUT11APX datasheet(3/8 Pages) PHILIPS

부품명	BUT11APX

상세설명	Silicon Diffused Power Transistor

PDF	8 Pages

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제조업체	PHILIPS [NXP Semiconductors]

홈페이지	http://www.nxp.com

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3 / 8 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

Fig.1. Test circuit for V

CEOsust.

Fig.2. Oscilloscope display for V

CEOsust.

Fig.3. Test circuit resistive load. V

IM = -6 to +8 V

CC = 250 V; tp = 20 µs; δ = tp / T = 0.01.

B and RL calculated from ICon and IBon requirements.

Fig.4. Switching times waveforms with resistive load.

Fig.5. Test circuit inductive load.

CC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH

Fig.6. Switching times waveforms with inductive load.

+ 50v

100-200R

Horizontal

Vertical

Oscilloscope

30-60 Hz

300R

10 %

90 %

ton

toff

IB1

-IB2

ICsat

30ns

VCE / V

min

VCEOsust

IC / mA

100

200

250

IB1

-VBB

T.U.T.

VCC

T.U.T.

VIM

ICsat

IB1

-IB2

toff

10 %

90 %

September 1998

Rev 1.000

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