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IRG4PC50W 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 IRG4PC50W
상세설명  IGBT
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRG4PC50W 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

  IRG4PC50W Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRG4PC50W Datasheet HTML 2Page - Inchange Semiconductor Company Limited IRG4PC50W Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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IRG4PC50W
IGBT
www.iscsemi.com
2023-9-12
2
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter
Breakdown
Voltage
VGE=0; IC= 0.25mA
600
--
--
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= VCE; IC= 0.25mA
3.0
--
6.0
V
VCE(sat)
Collector-Emitter Saturation Voltage I
C
= 27A; VCE= 15V,
TC=25℃
--
1.93
2.3
V
VCE(sat)
Collector-Emitter Saturation Voltage I
C
= 27A; VCE= 15V,
TC=150℃
--
1.71
--
V
ICES
Zero Gate Voltage Collector Current VCE= 600V; VGE=0
--
--
250
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V; VCE=0
--
--
±
100
nA
gts
Forward Transconductance
IC= 40A; VCE= 15V
--
45
--
S
Cies
Input Capacitance
VGS = 0V,
VCS = 30V,
f = 1.0MHz
--
3810
--
pF
Coes
Output Capacitance
--
280
--
Cres
Reverse Transfer Capacitance
--
78
--
Qg
Total Gate Charge
VGE = 15V,
IC= 27A,
VCE = 400V
--
198
--
nC
Qgs
Gate-Source Charge
--
30
--
Qgd
Gate-Drain Charge
--
88
--
td(on)
Turn-on Delay Time
VGE = 15V,
IC= 27A,
VCE = 480V
RG=Roff =5Ω
TJ=25℃
--
55
--
ns
tr
Turn-on Rise Time
--
46
--
ns
Eon
Turn-on switching losses
--
0.1
--
mJ
td(off)
Turn-off Delay Time
--
135
--
ns
tf
Turn-off Fall Time
--
60
--
ns
Eoff
Turn-off switching losses
--
0.4
--
mJ



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