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ISCD7003 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCD7003 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISCD7003 SiC Schottky DIODE www.iscsemi.com 1 FEATURES · Very low leakage current · Planar passivated chips · Improved thermal behaviour APPLICATIONS · Antisaturation diode · SMPS,UPS · Snubber diode Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 1700 V IF(AV) Average Rectified Forward Current,TC=100℃ 10 A IFSM Non-repetitive Peak Surge Current, sine halfwave,t = 10 ms; (50 Hz), sine; Tvj = 45°C 60 A PD Power Dissipation ,TC=25℃ 85 W TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.5 ℃ /W |
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