TIP107 datasheet(1/3 Pages) UTC

부품명	TIP107

상세설명	PNP EPITAXIAL TRANSISTOR

PDF	3 Pages

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제조업체	UTC [Unisonic Technologies]

홈페이지	http://www.utc-ic.com

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UTCTIP107

PNPEPITAXIAL PLANAR TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R203-023,A

PNP EPITAXIAL TRANSISTOR

DESCRIPTION

The UTC TIP107 is designed for using in general purpose

amplifier and switching applications.

FEATURE

*Low VCE(sat)

*High current gain

*Complementary to TIP102

TO-220

1

1:BASE 2:COLLECTOR 3:EMITTER

Absolute Maximum Ratings(T C =25℃)

Parameter

Symbol

Value

Units

Collector-Base Voltage

VCBO

-100

V

Collector-Emitter Voltage

VCEO

-100

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current (DC)

IC

-8

A

Collector Current (Pulse)

ICP

-15

A

Base Current (DC)

IB

-1

A

Collector Dissipation

Pc

80

W

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

- 65~150

℃

Electrical Characteristics(TC =25℃)

Parameter

Symbol

TEST CONDITIONS

MIN. MAX. UNIT

Collector-Emitter Sustaining Voltage

VCEO(SUS) IC = -30mA, IB = 0

-100

V

Collector Cut-off Current

ICEO

VCE= - 50V, IB=0

50

µA

Collector Cut-off Current

ICBO

VCB= - 100V, IE=0

-50

µA

Emitter Cut-off Current

IEBO

VBE= - 5V, IC=0

-2

mA

DC Current Gain

hFE

VCE= - 4V, IC= - 3A

VCE= - 4V, IC= - 8A

1000

200

20000

Collector-Emitter Saturation Voltage

VCE (sat)

IC= - 3A, IB= - 6mA

IC= - 8A, IB= - 80mA

-2

-2.5

V

Base-Emitter ON Voltage

VBE (on)

VCE= - 4V, IC= - 8A

-2.8

V

Output Capacitance

COb

VCB= -10V, IE=0, f=0.1MHZ

300

pF

유사한 부품 번호 - TIP107

제조업체	부품명	데이터시트	상세설명
Mospec Semiconductor	TIP107	200Kb / 4P	POWER TRANSISTORS(8A,60-100V,80W)
Motorola, Inc	TIP107	218Kb / 6P	DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor	TIP107	218Kb / 6P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 1995 REV 7
Power Innovations Ltd	TIP107	152Kb / 6P	PNP SILICON POWER DARLINGTONS
STMicroelectronics	TIP107	35Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Oct-1999

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