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STS12NH3LL 데이터시트(PDF) 5 Page - STMicroelectronics |
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STS12NH3LL 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() STS12NH3LL Electrical characteristics 5/12 Table 5. Switching times Symbol Parameter Test condictions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=15V, ID= 6A, RG=4.7Ω, VGS=4.5V (see Figure 13) 15 32 18 8.5 ns ns ns ns Table 6. Source drain diode Symbol Parameter Test condictions Min Typ. Max Unit ISD Source-drain current 12 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 48 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on Voltage ISD=12A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A, di/dt = 100A/µs, VDD=20V, Tj=150°C (see Figure 15) 24 17.4 1.45 ns nC A |
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