| 전자부품 데이터시트 검색엔진 |
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MPSW13 데이터시트(PDF) 2 Page - ON Semiconductor |
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MPSW13 데이터시트(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() MPSW13 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 30 − Vdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO − 100 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO − 100 nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 5,000 10,000 − − − Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) − 1.5 Vdc Base−Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE(on) − 2.0 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT 125 − MHz 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = |hfe| • ftest. 1.5 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 3.0 k 2.0 k 1.0 k 500 200 20 2.0 5.0 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 10 TA = 25°C TC = 25°C 1.0 ms 1.0 s 100 ms Figure 1. Active Region − Safe Operating Area DUTY CYCLE ≤ 10% |
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