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BYD11K 데이터시트(PDF) 2 Page - NXP Semiconductors

부품명 BYD11K
상세설명  Controlled avalanche rectifiers
PDF  7 Pages
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD11K 데이터시트(HTML) 2 Page - NXP Semiconductors

  BYD11K Datasheet HTML 1Page - NXP Semiconductors BYD11K Datasheet HTML 2Page - NXP Semiconductors BYD11K Datasheet HTML 3Page - NXP Semiconductors BYD11K Datasheet HTML 4Page - NXP Semiconductors BYD11K Datasheet HTML 5Page - NXP Semiconductors BYD11K Datasheet HTML 6Page - NXP Semiconductors BYD11K Datasheet HTML 7Page - NXP Semiconductors  
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1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
™(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER
MARKING CODE
BYD11D
11D
BYD11G
11G
BYD11J
11J
BYD11K
11K
BYD11M
11M
MAM196
k
a
Fig.1 Simplified outline (SOD91) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD11D
−
200
V
BYD11G
−
400
V
BYD11J
−
600
V
BYD11K
−
800
V
BYD11M
−
1000
V
VRWM
crest working reverse voltage
BYD11D
−
200
V
BYD11G
−
400
V
BYD11J
−
600
V
BYD11K
−
800
V
BYD11M
−
1000
V
VR
continuous reverse voltage
BYD11D
−
200
V
BYD11G
−
400
V
BYD11J
−
600
V
BYD11K
−
800
V
BYD11M
−
1000
V



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