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BYD11K 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BYD11K 데이터시트(HTML) 2 Page - NXP Semiconductors |
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2 / 7 page ![]() 1996 Sep 26 2 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BYD11 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass package through Implotec ™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. MARKING TYPE NUMBER MARKING CODE BYD11D 11D BYD11G 11G BYD11J 11J BYD11K 11K BYD11M 11M MAM196 k a Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD11D − 200 V BYD11G − 400 V BYD11J − 600 V BYD11K − 800 V BYD11M − 1000 V VRWM crest working reverse voltage BYD11D − 200 V BYD11G − 400 V BYD11J − 600 V BYD11K − 800 V BYD11M − 1000 V VR continuous reverse voltage BYD11D − 200 V BYD11G − 400 V BYD11J − 600 V BYD11K − 800 V BYD11M − 1000 V |
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