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BYD52G 데이터시트(PDF) 2 Page - NXP Semiconductors

부품명 BYD52G
상세설명  Fast soft-recovery controlled avalanche rectifiers
PDF  8 Pages
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD52G 데이터시트(HTML) 2 Page - NXP Semiconductors

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1998 Dec 03
2
Philips Semiconductors
Preliminary specification
Fast soft-recovery controlled
avalanche rectifiers
BYD52 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD120
package through Implotec
™(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD120) and symbol.
handbook, halfpage
ka
MGL571
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD52D
−
200
V
BYD52G
−
400
V
BYD52J
−
600
V
VR
continuous reverse voltage
BYD52D
−
200
V
BYD52G
−
400
V
BYD52J
−
600
V
IF(AV)
average forward current
Tamb =25 °C; printed-circuit board
mounting, pitch 5 mm, see Fig.6;
averaged over any 20 ms period;
see Fig.2
−
0.47
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =25 °C; VR =VRRMmax
−
5A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see fig.3
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 1 A; see Fig.4
3.6
V
IR
reverse current
VR =VRRMmax
1
µA
VR =VRRMmax; Tj = 165 °C; see Fig.5
100
µA
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.7
30
ns



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