BYD71B datasheet(3/11 Pages) PHILIPS

3 / 11 page

1996 Sep 19

Not recommended for new designs

Philips Semiconductors

Product speciﬁcation

Ultra fast low-loss

controlled avalanche rectiﬁers

BYD71 series

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

IFRM

repetitive peak forward current

Ttp =55 °C; see Figs 6 and 7

BYD71A to D

−

4.7

BYD71E to G

−

5.0

IFRM

repetitive peak forward current

Tamb =60 °C; see Figs 8 and 9

BYD71A to D

−

3.7

BYD71E to G

−

3.9

IFSM

non-repetitive peak forward current

t = 10 ms half sine wave;

Tj =Tj max prior to surge;

VR =VRRMmax

−

PRSM

non-repetitive peak reverse power

dissipation

t=20

µs half sine wave; Tj =Tj max

prior to surge

BYD71A to D

−

250

BYD71E to G

−

150

Tstg

storage temperature

−65

+175

°C

junction temperature

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

IF = 0.5 A; Tj =Tj max;

see Figs 12 and 13

BYD71A to D

−−

0.84

BYD71E to G

−−

0.90

forward voltage

IF = 0.5 A;

see Figs 12 and 13

BYD71A to D

−−

1.05

BYD71E to G

−−

1.11

V(BR)R

reverse avalanche breakdown

voltage

IR = 0.1 mA

BYD71A

−−

BYD71B

110

−−

BYD71C

165

−−

BYD71D

220

−−

BYD71E

275

−−

BYD71F

330

−−

BYD71G

440

−−

reverse current

VR =VRRMmax;

see Fig 14

−−

µA

VR =VRRMmax;

Tj = 165 °C; see Fig 14

−−

µA

trr

reverse recovery time

when switched from

IF = 0.5 A to IR =1A;

measured at IR = 0.25 A

see Fig 18

BYD71A to D

−−

BYD71E to G

−−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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