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AD8131ARMZ 데이터시트(PDF) 7 Page - Analog Devices |
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AD8131ARMZ 데이터시트(HTML) 7 Page - Analog Devices |
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7 / 20 page ![]() AD8131 Rev. B | Page 7 of 20 ABSOLUTE MAXIMUM RATINGS Table 5.1 Parameter Rating Supply Voltage ±5.5 V VOCM ±VS Internal Power Dissipation 250 mW Operating Temperature Range −40°C to +125°C Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering 10 sec) 300°C 1 Thermal resistance measured on SEMI standard 4-layer board. 8-lead SOIC: θJA = 121°C/W. 8-lead MSOP: θJA = 142°C/W. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. AMBIENT TEMPERATURE ( °C) –50 0 TJ = 150°C 2.0 1.5 1.0 8-LEAD SOIC PACKAGE –20 10 100 130 8-LEAD MSOP PACKAGE 0.5 40 70 Figure 3. Plot of Maximum Power Dissipation vs. Temperature ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
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