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BYV160 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BYV160 데이터시트(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 2000 Feb 01 2 Philips Semiconductors Product specification Ultra fast low-loss rectifier BYV160 FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 3 page (Datasheet) MAM047 ka Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 600 V VR continuous reverse voltage − 600 V IF(AV) average forward current Ttp =60 °C; lead length = 10 mm; see Fig.5; averaged over any 20 ms period; see Fig.6 − 2A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =25 °C; VR =VRRMmax − 40 A Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.7 −65 +175 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 2 A; Tj =Tj max; see Fig.2 1.00 V IF = 2 A; see Fig.2 1.20 V IR reverse current VR =VRRMmax; see Fig.3 5 µA VR =VRRMmax; Tj = 150 °C; see Fig.3 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A 50 ns |
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