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ISF1017 데이터시트(PDF) 3 Page - Inchange Semiconductor Company Limited |
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ISF1017 데이터시트(HTML) 3 Page - Inchange Semiconductor Company Limited |
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3 / 7 page ![]() ISF1017 SiC N-Channel MOSFET www.iscsemi.com 3 SOURCE-DRAIN BODY DIODE CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ISD Source-Drain Current -- -- 80 A VSD Diode Forward Voltage ISD= 40A; VGS= 0V -- 4.9 -- V trr Reverse Recovery Time VGS= -3/+18V, ISD=80A di/dt=400A/us, VDS= 400V -- 85 -- ns Qrr Reverse Recovery Charge -- 305 -- uC Irrm Peak Reverse Recovery Crrent -- 9 -- A TYPICAL CHARACTERISTICS CURVES |
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