Philips Semiconductors

Product specification

Dual rectifier diodes

BYV34 series

ultrafast

Fig.5. Maximum t

Fig.6. Maximum I

diode.

Fig.7. Typical and maximum forward characteristic

Fig.8. Maximum Q

Fig.9. Transient thermal impedance per diode

Z

1

10

trr / ns

110

100

1000

100

dIF/dt (A/us)

1A

IF=20 A

Tj = 25 C

Tj = 100 C

1

10

100

1000

Qs / nC

1.0

10

100

-dIF/dt (A/us)

IF = 20 A

2 A

10

1

0.1

0.01

Irrm / A

1

10

100

-dIF/dt (A/us)

IF=1A

IF= 20 A

Tj = 25 C

Tj = 100 C

1us

10us

100us

1ms

10ms

100ms

1s

10s

0.001

0.01

0.1

1

10

BYV32E

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

T

T

P

t

D

0

0.5

1

1.5

2

0

5

10

15

20

25

30

BYV34

VF / V

IF / A

max

typ

Tj = 25 C

Tj = 150 C

October 1998

3

Rev 1.400