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AT45DB642D 데이터시트(PDF) 40 Page - ATMEL Corporation |
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AT45DB642D 데이터시트(HTML) 40 Page - ATMEL Corporation |
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40 / 55 page ![]() 40 3542F–DFLASH–09/06 AT45DB642D 21.10 Command Sequence for Read/Write Operations for Page Size 1024 Bytes (Except Status Register Read, Manufacturer and Device ID Read) 21.11 Command Sequence for Read/Write Operations for Page Size 1056 Bytes (Except Status Register Read, Manufacturer and Device ID Read) 22. Write Operations The following block diagram and waveforms illustrate the various write sequences available. SI or I/O7 - I/O0 (INPUT)? CMD 8 bits 8 bits 8 bits Page Address (A22 - A10) X X X X X X X X X X X X X X X LSB X X X X X X X X Byte/Buffer Address (A9 - A0/BFA9 - BFA0) MSB SI or I/O7 - I/O0 (INPUT)? CMD 8 bits 8 bits 8 bits MSB Page Address (PA12 - PA0) X X X X X X X X X X X X X X X X LSB X X X X X X X X Byte/Buffer Address (BA10 - BA0/BFA10 - BFA0) FLASH MEMORY ARRAY PAGE (1024/1056 BYTES) BUFFER 2 (1024/1056 BYTES) BUFFER 1 (1024/1056 BYTES) I/O INTERFACE SI BUFFER 1 TO MAIN MEMORY PAGE PROGRAM BUFFER 2 TO MAIN MEMORY PAGE PROGRAM BUFFER 1 WRITE BUFFER 2 WRITE I/O7 - I/O0 |
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