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S8008DRP 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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S8008DRP 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 S8008DRP Thyristor Modules ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX UNIT VT Forward Voltage Drop ITM = 16A,TJ = 25 ℃ 16 V IDRM IRRM Peak Reverse and Off-state Leakage Current VR= VRRM,TJ = 25 ℃ 10 uA IGT DC gate current required to trigger VD = 12V RL = 60Ω 15 mA VGT DC gate voltage required to trigger 1.5 V (di/dt)cr Critical rate of rise of on-state current Tvj = 125℃ 200 A/us tq Circuit commutated turn-off time Tvj = 125℃ 35 us IH Holding current Tvj = 25℃,ITM= 200mA 30 mA PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) |
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