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NLSF302 데이터시트(PDF) 1 Page - ON Semiconductor |
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NLSF302 데이터시트(HTML) 1 Page - ON Semiconductor |
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1 / 4 page ![]() © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 4 1 Publication Order Number: NLSF302/D NLSF302 Quad 2−Input NOR Gate The NLSF302 is an advanced high speed CMOS 2−input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. Features • High Speed: tPD = 3.6 ns (Typ) at VCC = 5.0 V • Low Power Dissipation: ICC = 2.0 mA (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 28% VCC • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Designed for 2.0 V to 5.5 V Operating Range • Low Noise: VOLP = 0.8 V (Max) • Function Compatible with Other Standard Logic Families • QFN−16 Package • Latchup Performance Exceeds 300 mA • ESD Performance: Human Body Model; > 2000 V, Machine Model > 200 V • Chip Complexity: 40 FETs or 10 Equivalent Gates • Pb−Free Package is Available* L L H H L H L H FUNCTION TABLE Inputs Output AB H L L L Y *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com Device Package Shipping† ORDERING INFORMATION NLSF302 = Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package NLSF302MNR2 QFN−16 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (Note: Microdot may be in either location) NLSF302MNR2G QFN−16 (Pb−Free) 3000/Tape & Reel MARKING DIAGRAM QFN−16 MN SUFFIX CASE 485G 16 NLSF 302 ALYW G G 1 1 |
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