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BZA109TS 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BZA109TS 데이터시트(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page ![]() 1997 Sep 08 3 Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor BZA109TS LIMITING VALUES (per diode) In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note to the Limiting values and Thermal characteristics 1. Current is flowing from input to corresponding output. 2. One or more diodes loaded. ELECTRICAL CHARACTERISTICS (per diode) Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IZ reverse current DC; Tamb =25 °C − 20 mA IF forward current DC; Tamb =25 °C − 100 mA IFT feed-through current DC; Tamb =25 °C; note 1 − 100 mA IFSM peak forward current tp = 1 ms; square wave − 4.5 A IZSM peak reverse current tp = 1 ms; square wave 2.5 A Ptot total power dissipation Tamb =25 °C; note 2 − 0.95 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient; note 2 135 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VZ reverse voltage IZ = 250 µA 6.4 6.8 7.2 V VF forward voltage IF = 100 mA −− 1.1 V VZSM reverse surge voltage tp = 1 ms; IZSM = 2.5 A −− 10 V IH input high current VIN = 5.25 V −− 0.5 µA RZ zener impedance IZ = 250 µA −− 100 Ω SZ temperature coefficient of VZ − 3 − mV/K CD input diode capacitance f = 1 MHz; VR =0 −− 200 pF f = 1 MHz; VR = 5.25 V −− 100 pF |
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