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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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YG862C08R 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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YG862C08R 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Schottky Barrier Rectifier YG862C08R www.iscsemi.com 2023-9-9 1 FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability. MECHANICAL CHARACTERISTICS · Low Voltage High Frequency Switching Power Supply. · Low Voltage High Frequency Invers Circuit. · Low Voltage Continued Circuit and Protection Circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 80 V IF(AV) Average Rectified Forward Current 10 A IFSM Nonrepetitive Peak Surge Current 10ms single half sine-wave superimposed on rated load conditions 125 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃ /W |
유사한 부품 번호 - YG862C08R |
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유사한 설명 - YG862C08R |
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