BZV49 datasheet(3/10 Pages) PHILIPS

3 / 10 page

2005 Feb 03

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZV49 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.

ELECTRICAL CHARACTERISTICS

Total series

Tamb =25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous forward current

−

250

IZSM

non-repetitive peak reverse current

tp = 100 µs; square wave;

Tj =25 °C prior to surge

see Table

“Per type”

Ptot

total power dissipation

Tamb =25 °C; note 1

−

PZSM

non-repetitive peak reverse power

dissipation

tp = 100 µs; square wave;

Tj =25 °C prior to surge; see Fig.2

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

forward voltage

IF = 50 mA; see Fig.3

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