Characteristic Curves

VRWM

VBR

IR

CJ

VC

Reverse Working Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Junction capacitance

Positive Clamping Voltage

UESD1LIN (15 V)

UESD1LIN (24 V)

Iτ=1mA UESD1LIN (15 V)

Iτ=1mA UESD1LIN (24 V)

VRWM=15V; T=25°C

VRWM=24V; T=25°C

VR =0V, f=1MHz;

Ipp=1.0A，Tp=8/20μs:

Ipp =5.0A，Tp=8/20μs:

Ipp=1.0A，Tp=8/20μs:

Ipp =3.0A, Tp =8/20μs:

UESD1LIN

(15 V)

UESD1LIN

(24 V)

--

--

16.7

26.7

--

--

--

--

--

--

--

--

--

18.9

27.8

--

--

1.0

--

--

--

--

15.0

24.0

20.3

31.5

1.0

1.0

--

25.0

44.0

43.0

70.0

V

V

V

V

μA

μA

pF

V

V

V

V

Characteristics

Symbol

Conditions

Typ.

Max

Unit

Min.

ROHS

Revision March 1,2022

www.unsemi.com.tw

For technical questions, contact: tech@unsemi.com.tw

ROHS

Electrical Characteristics @ 25℃ Unless Otherwise Specified )

Specifications are subject to change without notice.

Please refer to www.unsemi.com.tw for current information.

2/3

UESD1LIN

LIN- bus ESD Protection Diode

Fig2. Power Rating Derating Curve

Fig1. 8/20μs Pulse Waveform

Fig3. ESD Pulse Waveform (according to IEC61000-4-2)

0

5

10

15

20

25 30

120

tr

100

80

60

40

Peak Value IPP

20

0

td=t IPP/2

TEST

WAVEFORM

PARAMETERS

tr=8μs

td=20μs

t - Time (μs)

100%

90%

10%

tr

30ns

=

Time

60ns

0

20

40

60

80 100 120 140 160 180 200

100

40

30

20

10

0

90

80

60

50

Ambient Temperature

– T

A (ºC)

70