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FS150R17N3E4 데이터시트(PDF) 4 Page - Inchange Semiconductor Company Limited |
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FS150R17N3E4 데이터시트(HTML) 4 Page - Inchange Semiconductor Company Limited |
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4 / 6 page ![]() ISGM2016 eq FS150R17N3E4 IGBT Module www.iscsemi.com 4 Erec Reverse Recovery energy TJ=25℃ -- 22 -- mJ TJ=125℃ -- 35 -- TJ=150℃ -- 39 -- Rth( j-c) Thermal Resistance,Junction to Case, per Diode -- -- 0.34 ℃ /W Rth(c-h) Thermal Resistance,Case to heatsink , per Diode -- 0.155 -- ℃ /W Module SYMBOL PARAMETER CONDITIONS Value UNIT VISOL Isolation test voltage RMS,f = 50Hz,t = 1 min. 3.4 KV Tstg Storage temperature -- -40-125 ℃ -- Internal isolation Basic insulation(Class 1,IEC61140) Al2O3 -- -- Creepage distance Terminal to heatsink 10 mm Terminal to terminal -- Clearance Terminal to heatsink 7.5 mm Terminal to terminal CTI Comparative Tracking Index TC=25℃ >200 LsCE Stray Inductance Module -- 28 nH RCC’+EE’ Module lead resistance ,terminal-chip Per switch 1.8 m Ω M Mounting torque for module mounting Screw M5 3.0-6.0 Nm G Weight TYP 300 g |
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