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IRG4PH50UD 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 IRG4PH50UD
상세설명  IGBT
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRG4PH50UD 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

  IRG4PH50UD Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRG4PH50UD Datasheet HTML 2Page - Inchange Semiconductor Company Limited IRG4PH50UD Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISG2017
eq IRG4PH50UD
IGBT
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case IGBT
0.64
℃
/W
Rth j-c
Thermal Resistance,Junction to Case Diode
0.83
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0; IC= 0.25mA
1200
--
--
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= VCE; IC=0.25mA
3.0
--
6.0
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 20A; VCE= 15V,
TJ= 25℃
--
2.56
3.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 24A; VCE= 15V,
TJ= 25℃
--
2.78
3.7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 45A; VCE= 15V,
TJ= 25℃
--
3.20
--
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 45A; VCE= 15V,
TJ= 150℃
--
5.54
--
V
ICES
Zero Gate Voltage Collector Current
VCE= 1200V; VGE=0
--
--
250
uA
ICES
Zero Gate Voltage Collector Current
VCE= 1200V; VGE=0
TJ=150℃
--
--
6500
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V; VCE=0
--
--
±
100
nA
VFM
Diode Forward Voltage Drop
IC= 16A
--
2.5
3.5
V
VFM
Diode Forward Voltage Drop
IC= 16A
TJ=150℃
--
2.1
3.0
V
Cies
Input Capacitance
VGS = 0V,
VCS = 30V,
f = 1.0MHz
--
4100
--
pF
Coes
Output Capacitance
--
240
--
Cres
Reverse Transfer Capacitance
--
48
--
Qg
Total Gate Charge
VGE = 15V,
IC= 27A,
VCE = 400V
--
180
--
nC
Qgs
Gate-Source Charge
--
29
--
Qgd
Gate-Drain Charge
--
62
--



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