BUT11A datasheet(2/5 Pages) STMICROELECTRONICS

부품명	BUT11A

상세설명	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	5 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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2 / 5 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = rated VCES

at Tc = 125

IEBO

Emitter Cut-off Current

(IC = 0)

IC = 0

VBE = 9 V

VCEO(sus)* Collector-emitter

Sustaining Voltage

(IB = 0)

IB (off) = 0

IC = 100 mA

450

VCE(sat)*

Collector-emitter

Saturation Voltage

IC = 2.5 A

IB = 0.5 A

1.5

VBE(sat)*

Base-emitter

Saturation Voltage

IC = 2.5 A

IB = 0.5 A

1.3

hFE

DC Current Gain

IC = 5 mA

VCE = 5 V

IC = 0.5 A

VCE = 5 V

ton

RESISTIVE LOAD

Turn on Time

Storage Time

Fall Time

IC = 2.5 A

VCC = 250 V

IB = -IB2 = 0.5 A

0.8

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

BUT11A

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