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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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10ETS10 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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10ETS10 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Input Rectifier Diode 10ETS10 www.iscsemi.com 1 FEATURES · The High Reverse Voltage range available allows design of input stage primary rectification with Outstanding Voltage Surge capability. APPLICATIONS · Typical applications are in input rectification and these products are designed to be used with International Rectifier Switches and · Output Rectifiers which are available in identical package outlines. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 800 V IF(AV) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current （ 10ms Sine pulse, rated VRRM applied） 170 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃ /W |
유사한 부품 번호 - 10ETS10 |
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유사한 설명 - 10ETS10 |
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