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F-5

NJ14AL Process

Silicon Junction Field-Effect Transistor

Temperature (K)

Noise as a Function of Temperature

Gate Source Voltage in Volts

Input Capacitance as a Function of VGS

Gate Source Cutoff Voltage in Volts

0

– 1– 2– 3– 4– 5– 6

Drain Saturation Current as a Function of VGS(OFF)

25

20

15

10

5

0

– 1– 2– 3– 4– 5– 6

10

100

1K

10K

100K

10

8

6

4

2

6

4

2

Frequency in Hz

Noise as a Function of Frequency

Gate Source Cutoff Voltage in Volts

Gfs as a Function of VGS(OFF)

100

150

200

250

300

350

2

4

6

8

f = 1 kHz

f = 100 kHz

VDG = 4 V

ID = 5 mA

0

– 4

– 8

– 12

– 16

3.5

3.0

2.5

2.0

1.5

VDS = Ø V

VDS = 5 V

Drain to Source Voltage in Volts

0

5

10

15

20

Drain Current as a Function of VDS

10

8

6

4

2

Vgs = –2.0 V

Vgs = –1.5 V

Vgs = –1.0 V

Vgs = –0.5 V

Vgs = Ø V

VGS(OFF) = Ð2.2 V

Databook.fxp

1/13/99 2:09 PM

Page F-5