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F-23

NJ36D Process

Silicon Junction Field-Effect Transistor

Gate Source Voltage in Volts

Input Capacitance as a Function of VGS

Drain Source Cutoff Voltage in Volts

Drain Saturation Current as a Function of VGS(OFF)

50

40

30

20

10

Drain to Source Voltage in Volts

0

5

10

15

20

Drain Current as a Function of VDS

30

20

10

Gate Source Cutoff Voltage in Volts

Gfs as a Function of VGS(OFF)

Vgs = –4 V

Vgs = –3 V

Vgs = –2 V

Vgs = –1 V

Vgs = Ø V

VGS(OFF) = Ð4.2 V

Drain Current in mA

0.1

1

10

20

Forward Tranconductance vs. Drain Current

10

8

6

4

2

IDSS = 10 mA

IDSS = 15 mA

IDSS = 25 mA

0

– 1

– 2

– 3

– 4

– 5

– 6

– 7

9

8

7

6

5

3

4

VDS = Ø V

VDS = 5 V

VDS = 10 V

Gate Source Voltage in Volts

Feedback Capacitance as a Function of VGS

0

– 4

– 8

– 12

– 16

VDS = Ø V

VDS = 5 V

VDS = 10 V

0

– 1

– 2

– 3

– 4

– 5

– 6

12

10

8

6

4

2

2.5

2.0

1.5

1.0

0.5

0

– 1

– 2

– 3

– 4

– 5

– 6

– 7

Databook.fxp

1/13/99 2:09 PM

Page F-23