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F-25

NJ42 Process

Silicon Junction Field-Effect Transistor

2468

10

12

1.2

1.0

0.8

0.6

0.4

0.2

Gate Source Cutoff Voltage in Volts

Gfs as a Function of VGS(OFF)

Drain Source Voltage in Volts

Output Admittance as a Function of VGS

0

10203040

50

1.0

0.8

0.6

0.4

0.2

Gate Source Voltage in Volts

– 0.1

– 1

– 10

– 20

Capacitance as a Function of VGS

10

8

6

4

2

VDS = 30 V

VDS = 50 V

Gate Source Cutoff Voltage in Volts

Drain Saturation Current as a Function of VGS(OFF)

– 2

– 4

– 6

– 8

– 10

8

6

4

2

Free Air Temperature in

°C

Drain Saturation Current as a Function of Temperature

– 75

– 25

0

75

125

175

4

8

12

16

VDS = 150 V

VDS = 30 V

IDSS

= 9 mA

IDSS

= 5.5 mA

IDSS

= 2.5 mA

IDSS = 5.5 mA

IDSS = 2.5 mA

3.0

2.0

1.0

Drain to Source Voltage in Volts

0

5

10

15

20

Drain Current as a Function of VDS

VGS = –4 V

VGS = –3 V

VGS = –2 V

VGS = –1 V

VGS = Ø V

VGS(OFF) = Ð4.2 V

Databook.fxp

1/13/99 2:09 PM

Page F-25