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F-41

NJ903 Process

Silicon Junction Field-Effect Transistor

Gate Source Cutoff Voltage in Volts

Drain Saturation Current as a Function of VGS(OFF)

500

400

300

200

100

Drain to Source Voltage in Volts

0

5

10

15

20

Drain Current as a Function of VDS

VGS = – 4 V

VGS = – 3 V

VGS = – 2 V

VGS = – 1 V

VGS = Ø V

VGS(OFF) = Ð4.2 V

0

– 2

– 4

– 6

– 8

1000

800

600

400

200

Gate Source Voltage in Volts

Feedback Capacitance as a Function of VGS

– 5

– 10

– 15

– 20

40

30

20

10

Gate Source Voltage in Volts

Input Capacitance as a Function of VGS

– 5

– 10

– 15

– 20

80

60

40

0

20

Gate Source Cutoff Voltage in Volts

RDS(ON) as a Function of VGS(OFF)

0

– 2

– 4

– 6

– 8

10

8

6

4

2

VDS = 15 V

VDS = 5 V

VDS = Ø V

VDS = 15 V

VDS = 5 V

VDS = Ø V

Temperature in

°C

0

25

50

75

100

125

150

Typical Gate Leakage Current

as a Function of Ambient Temperature

– 0.1

– 1

– 0.01

– 10

– 100

IGSS @ VGS = – 20 V

VDS = Ø V

Databook.fxp

1/13/99 2:09 PM

Page F-41