BSC059N04LS6 datasheet(1/3 Pages) ISC

부품명	BSC059N04LS6

상세설명	N-Channel MOSFET

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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BSC059N04LS6

N-Channel MOSFET

www.iscsemi.com

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FEATURES

·Drain Current -ID= 59A@ TC=25℃

·Drain Source Voltage -VDSS=40V(Min)

·Static Drain-Source On-Resistance

-RDS(on) =5.9mΩ(Max)@VGS= 10V

APPLICATIONS

·

Switch Mode Power Supply (SMPS)

·

Uninterruptible Power Supply (UPS)

·

Power Factor Correction (PFC)

Absolute Maximum Ratings(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage-Continuous

±

20

V

ID

Drain Current-Continuous

59

A

IDM

Drain Current-Single Pluse

236

A

PD

Total Dissipation @TC=25℃

38

W

TJ

Max. Operating Junction Temperature

175

℃

Tstg

Storage Temperature

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

4.0

℃

/W

Gate

Drain

Source

D

S

Pin 1

유사한 부품 번호 - BSC059N04LS6

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	BSC059N04LS6	1Mb / 12P	OptiMOSTM 6 Power-Transistor, 40 V Rev.2.1,2020-07-22

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BSC059N04LS6 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

BSC059N04LS6 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

유사한 부품 번호 - BSC059N04LS6

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