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FGH60N60UFD 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 FGH60N60UFD
상세설명  Field Stop IGBT
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FGH60N60UFD 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

  FGH60N60UFD Datasheet HTML 1Page - Inchange Semiconductor Company Limited FGH60N60UFD Datasheet HTML 2Page - Inchange Semiconductor Company Limited FGH60N60UFD Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISG2021
eq FGH60N60UFD
Field Stop IGBT
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case IGBT
0.33
℃
/W
Rth j-c
Thermal Resistance,Junction to Case DIODE
1.1
℃
/W
Rth j-c
Thermal Resistance,Junction to Ambient
40
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0; IC= 0.25mA
600
--
--
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= VCE; IC= 0.25mA
4.0
5.0
6.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 60A; VCE= 15V
--
1.9
2.4
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 60A; VCE= 15V,
TC=125℃
--
2.1
--
V
ICES
Zero Gate Voltage Collector Current
VCE= 1200V; VGE=0
--
--
250
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V; VCE=0
--
--
±
400
nA
Cies
Input Capacitance
VGS = 0V,
VCS = 25V,
f = 1.0MHz
--
1537
--
pF
Coes
Output Capacitance
--
165
--
Cres
Reverse Transfer Capacitance
--
48.8
--
Qg
Total Gate Charge
VGE = 15V,
IC= 60A,
VCE = 520V
--
98
--
nC
QGE
Gate-Emitter Charge
--
15.6
--
QGC
Gate-Collector Charge
--
56
--



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