APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739

2

PB50

ABSOLUTE MAXIMUM RATINGS

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

SUPPLY VOLTAGE, +V

200V

OUTPUT CURRENT, within SOA

2A

POWER DISSIPATION, internal at T

1

35W

INPUT VOLTAGE, referred to common

±15V

TEMPERATURE, pin solder—10 sec max

300°C

150°C

TEMPERATURE, storage

–65 to +150°C

OPERATING TEMPERATURE RANGE, case

–55 to +125°C

SPECIFICATIONS

PARAMETER

MIN

TYP

MAX

UNITS

INPUT

OFFSET VOLTAGE, initial

±.75

±1.75

V

OFFSET VOLTAGE, vs. temperature

Full temperature range

–4.5

–7

mV/°C

INPUT IMPEDANCE, DC

25

50

kΩ

INPUT CAPACITANCE

3

pF

CLOSED LOOP GAIN RANGE

3

10

25

V/V

GAIN ACCURACY, internal Rg, Rf

A

±10

±15

%

GAIN ACCURACY, external Rf

A

±15

±25

%

PHASE SHIFT

F = 10kHz, AV

10

°

F = 200kHz, AV

60

°

OUTPUT

VOLTAGE SWING

Io = 2A

V

V

V

VOLTAGE SWING

Io = 1A

V

V

V

VOLTAGE SWING

Io = .1A

V

V

V

CURRENT, continuous

2

A

SLEW RATE

Full temperature range

50

100

V/µs

CAPACITIVE LOAD

Full temperature range

2200

pF

SETTLING TIME to .1%

R

2

µs

POWER BANDWIDTH

V

160

320

kHz

SMALL SIGNAL BANDWIDTH

C

100

kHz

SMALL SIGNAL BANDWIDTH

C

1

MHz

POWERSUPPLY

VOLTAGE, ±V

S

3

Full temperature range

±60

±100

V

CURRENT, quiescent

V

9

12

mA

V

12

18

mA

V

17

25

mA

THERMAL

Full temp. range, F > 60Hz

1.8

2.0

°C/W

RESISTANCE, DC junction to case

Full temp. range, F < 60Hz

3.2

3.5

°C/W

RESISTANCE, junction to air

Full temperature range

30

°C/W

TEMPERATURE RANGE, case

Meets full range specifications

–25

25

85

°C

NOTES: 1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to

achieve high MTTF (Mean Time to Failure).

2. The power supply voltage specified under typical (TYP) applies, T

3. +V

4. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.

5. +V

The PB50 is constructed from MOSFET transistors. ESD handling procedures must be observed.

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or

subject to temperatures in excess of 850°C to avoid generating toxic fumes.

CAUTION