HT2MOA3S20SLASHESLASH3 datasheet(6/22 Pages) PHILIPS

6 / 22 page

Specifications of the HT2 MOA3 S20

Rev. 1.1

1997-08-19

Ht2moa3.doc/HS

Page 6 of 22

2.6 Electrical Specifications

Symbol

min

typ

max

Comment / Conditions

Absolute Maximum Ratings

Junction Temperature

-55°C

140°C

Input Peak Current

INpeak

30 mA

Latch up Current

100 mA

MIL-STD 883D, Method 3023

ESD

2 kV

MIL-STD 883D, Method 3015.7,

Human Body

Operating Range

Temperature

-40°C

85°C

RThJunctionAmbient

≤ 30 K/W @

IINpeak = 30 mA

Input Read Only Threshold

Voltage

1) 3)

VIN,RO

2,8 Vp

3,9 Vp

start modulation in read only

modes

Input Threshold Voltage

1) 3)

VIN,TH

3,1 Vp

4,2 Vp

start modulation after SETCC

Input Read Voltage

1) 3)

VIN,RD

3,5 Vp

4,5 Vp

read E²PROM

Input Write Voltage

1) 3)

VIN,WR

3,7 Vp

4,7 Vp

write E²PROM

Demodulator

Range

VDEM_R

2,0 Vp

4,0 Vp

VINHigh - VINLow @ VINHigh = 5,0 Vp

T0=8 µs, TMOD=6*T0

Modulator

R_MOD linear

RMODL

4,5 k

Ω V

INLow

≤ 2,0 V

R_MOD nonlinear

RMODNL

3,6 k

Ω V

INLow

≥ 2,0 V

Resonance Capacitor

CResInit

189 pF

210 pF

231 pF

VIN = 4,0 Vp

EEPROM

Write Current

25 µA

VDD = 2,8 V

Read Current

9 µA

VDD = 2,8 V

Data Retention

Years

@ 55°C

Write Endurance

Cycles

100.000

V

 = V

IN1

− V

IN2

 ... voltage between connection pads

VINHigh

input voltage before modulation

VINLow

input voltage during modulation

TMOD

duration of the modulation

@ Ri = 10 k

Ω resistance of measurement equipment

tested on silicon level

HT2MOA3S20/E/3 데이터시트(PDF) 6 Page - NXP Semiconductors

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