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REF54300QDR 데이터시트(PDF) 25 Page - Texas Instruments

부품명 REF54300QDR
상세설명  REF54 0.8 ppm/°C Maximum Drift, 0.11 ppmp-p 1/f Noise, 380 μA Current, Precision Voltage Reference
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REF54300QDR 데이터시트(HTML) 25 Page - Texas Instruments

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9.3 Layout
9.3.1 Layout Guidelines
• Place the power-supply bypass capacitor as close as possible to the supply and ground pins. The
recommended value of this bypass capacitor is from 0.1 μF to 10 μF. If necessary, additional decoupling
capacitance can be added to compensate for noisy or high-impedance power supplies. The smallest
capacitor must be placed closest to the device.
• The output must be decoupled with a 1 μF to 100 μF low ESR (maximum 1 Ω) capacitor.
• Place a 1 μF to 100 μF low leakage noise filtering capacitor between the NR pin and ground.
9.3.2 Layout Example
Figure 9-6. Layout Example for SOIC package
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REF54
SNVSCN7 – NOVEMBER 2023
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