MBR3045PT datasheet(1/3 Pages) DIODES

부품명	MBR3045PT

상세설명	30A SCHOTTKY BARRIER RECTIFIER

PDF	3 Pages

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제조업체	DIODES [Diodes Incorporated]

홈페이지	http://www.diodes.com

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DS23017 Rev. 8 - 2

1 of 3

MBR3030PT - MBR3060PT

www.diodes.com

ã Diodes Incorporated

MBR3030PT - MBR3060PT

30A SCHOTTKY BARRIER RECTIFIER

Features

A

B

E

G

J

L

M

N

P

Q

K

S

M

H

R

D

C

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

·

Guard Ring Die Construction for

Transient Protection

·

Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward Voltage Drop

·

For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Applications

·

Lead Free Finish, RoHS Compliant (Note 4)

Mechanical Data

·

Case: TO-3P

·

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

·

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals: Finish

¾ Bright Tin. Plated Leads Solderable

per MIL-STD-202, Method 208

·

Polarity: As Marked on Body

·

Ordering Information: See Last Page

·

Marking: Type Number

·

Weight: 5.6 grams (approximate)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

MBR

3030PT

MBR

3035PT

MBR

3040PT

MBR

3045PT

MBR

3050PT

MBR

3060PT

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

30

35

40

45

50

60

V

RMS Reverse Voltage

VR(RMS)

21

24.5

28

31.5

35

42

V

Average Rectified Output Current

@ TC = 125

°C

Total Device (See Fig. 1)

IO

30

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load

(JEDEC Method)

IFSM

200

A

Forward Voltage Drop

@ IF = 20A, TC = 25

°C

per element (Note 3)

@ IF = 20A, TC = 125

°C

@ IF = 30A, TC = 25

°C

@ IF = 30A, TC = 125

°C

VFM

¾

0.60

0.76

0.72

0.75

0.65

0.80

0.75

V

Peak Reverse Current

@ TC = 25

°C

at Rated DC Blocking Voltage, per element @ TC = 125

°C

IRM

1.0

60

5.0

100

mA

Typical Total Capacitance

(Note 2)

CT

500

pF

Typical Thermal Resistance Junction to Case

(Note 1)

RqJc

1.4

°C/W

Voltage Rate of Change (Rated VR)

dV/dt

10,000

V/µs

Operating Temperature Range

Tj

-65 to +150

°C

Storage Temperature Range

TSTG

-65 to +175

°C

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2.

Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3.

Pulse width

£300 ms, duty cycle £2%.

4.

RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see

EU Directive Annex Notes 5 and 7.

TO-3P

Dim

Min

Max

A

1.88

2.08

B

4.68

5.36

C

20.63

22.38

D

18.5

21.5

E

2.1

2.4

G

0.51

0.76

H

15.38

16.25

J

1.90

2.70

K

2.9

Æ

3.65

Æ

L

3.78

4.50

M

5.2

5.7

N

0.89

1.53

P

1.82

2.46

Q

2.92

3.23

R

11.70

12.84

S

¾

6.10

All Dimensions in mm

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