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GSMBRTL20120 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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GSMBRTL20120 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Barrier Rectifier GSMBRTL20120 www.iscsemi.com 2023-8-18 1 FEATURES ·Multi-layer Metal -Silicon Potential Structure ·Low Leakage Current ·High Current Capability, High Efficiency ·High Junction Temperature Capability MECHANICAL CHARACTERISTICS ·Low Voltage High Frequency Switching Power Supply ·Low Voltage High Frequency Invers Circuit ·Low Voltage Continued Circuit and Protection Circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 120 V IF(AV) Average Rectified Forward Current Per Device 20 A IF(AV) Average Rectified Forward Current Per Diode 10 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 120 A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃ /W |
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