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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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HCS70R600S 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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HCS70R600S 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1049 eq HCS70R600S N-Channel Super Junction MOSFET www.iscsemi.com 1 FEATURES ·Drain Current -ID= 7.3A@ TC=25℃ ·Drain Source Voltage -VDSS= 700V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.6Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply(SMPS) · Power Factor Correction(PFC) · TV Power & LED lighting Power · AC to DC Converters Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 7.3 A ID Drain Current-Continuous at TC=100℃ 4.6 A IDM Drain Current-Single Pluse 22 A PD Total Dissipation @TC=25℃ 28 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.47 ℃ /W |
유사한 부품 번호 - HCS70R600S |
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유사한 설명 - HCS70R600S |
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